A self-aligned approach to fabricate planar gated nanowires field emitter arrays

A self-aligned approach was developed to fabricate planar gated nanowire field emitter arrays (FEAs). A single mask was used to etch the gate dielectric and define the area for nanowire growth, in which a self-alignment between the gate and the nanowire cathode is achieved. A planar gated ZnO nanowires FEAs was fabricated by using this approach .