5 GHz Power Amplifier Design with AMS 0.35 μm SiGe BiCMOS Technology for IEEE 802.11a WLAN

Author

Kavlak, C. ; Tekin, I.

Author_Institution

Muhendislik ve Doga Bilimleri Fakultesi, Sabanci Univ., Istanbul

fYear

2006

fDate

17-19 April 2006

Firstpage

1

Lastpage

4

Abstract

In this work, a 5 GHz radio frequency power amplifier for 802.11a wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 mum SiGe BiCMOS (f_t=60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 mum emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21%

Keywords

BiCMOS integrated circuits; germanium compounds; heterojunction bipolar transistors; power amplifiers; radiofrequency amplifiers; silicon compounds; wireless LAN; 0.35 micron; 3.3 V; 5 GHz; AMS; Austria Micro System; IEEE 802.11a wireless LAN; PAE; SiGe; SiGe BiCMOS HBT technology; heterojunction bipolar transistor; local area network; power added efficiency; radio frequency power amplifier; BiCMOS integrated circuits; Germanium silicon alloys; Power amplifiers; Power generation; Power supplies; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Processing and Communications Applications, 2006 IEEE 14th

Conference_Location

Antalya

Print_ISBN

1-4244-0238-7

Type

conf

DOI

10.1109/SIU.2006.1659888

Filename

1659888