DocumentCode
230709
Title
Laser-induced electron emission from p-type silicon emitters
Author
Shimawaki, Hidetaka ; Nagao, Masaru ; Yoshida, Takafumi ; Neo, Yoichiro ; Mimura, Hidenori ; Wakaya, Fujio ; Takai, Mineo
Author_Institution
Dept. of Syst. & Inf. Eng., Hachinohe Inst. of Technol., Hachinohe, Japan
fYear
2014
fDate
6-10 July 2014
Firstpage
196
Lastpage
197
Abstract
We have studied the photoassisted electron emission from a p-type silicon field emitter array under illumination of laser lights with 633 nm and 405 nm wavelengths. The increase of the emission current under light illumination is proportional to the emission current in the dark. The significant influence of the polarization in photoassisted emission for each wavelength was not observed.
Keywords
elemental semiconductors; field emitter arrays; laser beam applications; silicon; Si; emission current; laser lights; laser-induced electron emission; light illumination; p-type silicon field emitter array; photoassisted electron emission; photoassisted emission polarization; wavelength 405 nm; wavelength 633 nm; Anodes; Coherence; Lasers; Lenses; Mirrors; Oscilloscopes; TV; field emission; p-type silicon; photoassisted emission; silicon field emitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location
Engelberg
Print_ISBN
978-1-4799-5306-6
Type
conf
DOI
10.1109/IVNC.2014.6894806
Filename
6894806
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