Title :
Laser-induced electron emission from p-type silicon emitters
Author :
Shimawaki, Hidetaka ; Nagao, Masaru ; Yoshida, Takafumi ; Neo, Yoichiro ; Mimura, Hidenori ; Wakaya, Fujio ; Takai, Mineo
Author_Institution :
Dept. of Syst. & Inf. Eng., Hachinohe Inst. of Technol., Hachinohe, Japan
Abstract :
We have studied the photoassisted electron emission from a p-type silicon field emitter array under illumination of laser lights with 633 nm and 405 nm wavelengths. The increase of the emission current under light illumination is proportional to the emission current in the dark. The significant influence of the polarization in photoassisted emission for each wavelength was not observed.
Keywords :
elemental semiconductors; field emitter arrays; laser beam applications; silicon; Si; emission current; laser lights; laser-induced electron emission; light illumination; p-type silicon field emitter array; photoassisted electron emission; photoassisted emission polarization; wavelength 405 nm; wavelength 633 nm; Anodes; Coherence; Lasers; Lenses; Mirrors; Oscilloscopes; TV; field emission; p-type silicon; photoassisted emission; silicon field emitter;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894806
