DocumentCode :
2307332
Title :
A correction to a cavity model for thin and multiple layer metalizations
Author :
Campbell, Charles F. ; Weber, Robert J. ; Stephenson, David T.
Author_Institution :
TriQuint Semicond., Richardson
fYear :
2007
fDate :
9-15 June 2007
Firstpage :
501
Lastpage :
504
Abstract :
A useful technique for the analysis of microstrip antenna is provided by the cavity model (Lo and Lee, 1988 and Lo et al., 1979). Unfortunately, the cavity model as it currently exists assumes that the radiating patch and ground plane metalizations are either many skin depths thick or thin enough that a DC current distribution may be employed. Low frequency or integrated microstrip antennas may have metalizations that are less than a skin depth thick or consisting of multiple layers of different metals. In order to accurately predict the performance of these microstrip antennas with the cavity model, the calculation of the conductor loss will have to include the effect of thin or multiple layer metalizations. This may be accomplished with the spectral domain method (Vilcot and Tedjini, 1993 and Itoh, 1989), however, the result is not easily applicable to the cavity model. This paper is concerned with the application of the cavity model for the analysis of microstrip antennas with metalizations that are less than a skin depth thick, or consist of multiple layers of different metals.
Keywords :
conductors (electric); metallisation; microstrip antennas; cavity model; conductor loss; microstrip antenna; multiple layer metalization; thin layer metalization; Circuit analysis computing; Conductors; Dielectric losses; Electric resistance; Magnetic fields; Microstrip antennas; Skin; Slabs; Surface impedance; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation Society International Symposium, 2007 IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-0877-1
Electronic_ISBN :
978-1-4244-0878-8
Type :
conf
DOI :
10.1109/APS.2007.4395540
Filename :
4395540
Link To Document :
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