Title :
Gate oxide breakdown model in MOS transistors
Author :
Yeoh, Teong-San ; Kamat, Nitin R. ; Nair, Remesh S. ; Hu, Shze-Jer
Author_Institution :
Intel Technol. Sdn. Bhd., Penang, Malaysia
Abstract :
Post MOS transistor gate oxide breakdown forms a phosphorous diffusion path in the gate oxide. This diffusion path originates from the phosphorous doped polysilicon gate. A model is presented based on SIMS analysis, electrical characterization and SPICE simulations, The model explains the contradicting temperature dependent leakage current for a device with gate oxide breakdown. This leakage exhibits either resistive- or diode-like behavior depending on breakdown site.
Keywords :
MOSFET; SPICE; electric breakdown; leakage currents; secondary ion mass spectra; semiconductor device models; CMOS microcontroller; MOS transistors; P diffusion path; SIMS analysis; SPICE simulations; breakdown site; diode-like behavior; electrical characterization; gate oxide breakdown model; polysilicon gate; resistive-like behavior; temperature dependent leakage current; Breakdown voltage; Dielectric breakdown; Diodes; Electric breakdown; Leakage current; MOSFETs; Microcontrollers; Resistors; Temperature dependence; Testing;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513668
