DocumentCode
2307386
Title
Gate oxide breakdown model in MOS transistors
Author
Yeoh, Teong-San ; Kamat, Nitin R. ; Nair, Remesh S. ; Hu, Shze-Jer
Author_Institution
Intel Technol. Sdn. Bhd., Penang, Malaysia
fYear
1995
fDate
4-6 April 1995
Firstpage
149
Lastpage
155
Abstract
Post MOS transistor gate oxide breakdown forms a phosphorous diffusion path in the gate oxide. This diffusion path originates from the phosphorous doped polysilicon gate. A model is presented based on SIMS analysis, electrical characterization and SPICE simulations, The model explains the contradicting temperature dependent leakage current for a device with gate oxide breakdown. This leakage exhibits either resistive- or diode-like behavior depending on breakdown site.
Keywords
MOSFET; SPICE; electric breakdown; leakage currents; secondary ion mass spectra; semiconductor device models; CMOS microcontroller; MOS transistors; P diffusion path; SIMS analysis; SPICE simulations; breakdown site; diode-like behavior; electrical characterization; gate oxide breakdown model; polysilicon gate; resistive-like behavior; temperature dependent leakage current; Breakdown voltage; Dielectric breakdown; Diodes; Electric breakdown; Leakage current; MOSFETs; Microcontrollers; Resistors; Temperature dependence; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location
Las Vegas, NV
Print_ISBN
0-7803-2031-X
Type
conf
DOI
10.1109/RELPHY.1995.513668
Filename
513668
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