Title :
Multi-electron-beam nanoelectronics
Author_Institution :
Dept. of Imaging Phys., Delft Univ. of Technol., Delft, Netherlands
Abstract :
For high throughput electron microscopy and lithography, the only option is to use multi-electron beam systems. For microscopy, a significant advance can be made with a system of about 100 beams in parallel. For lithography to be used as a direct write method of integrated circuits, hundreds of thousands of beams are necessary. For focusing, deflection and blanking of the beams, special vacuum nanoelectronics has been developed. The ultimate example is a beam blanker that can switch 129.948 beams at 70 Mbps per beam.
Keywords :
electron beams; electron microscopy; nanolithography; vacuum microelectronics; beam blanker; beam blanking; beam deflection; beam focusing; direct write method; electron microscopy; integrated circuits; lithography; multielectron beam nanoelectronics; vacuum nanoelectronics; Acceleration; Arrays; Image resolution; Integrated optics; Micromechanical devices; Optical imaging; electron beam blanking; electron beam lithography; electron microscopy; vacuum nanoelectronics;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894823
