Title :
Fabrication of spindt-type double-gated field-emitters using photoresist lift-off layer
Author :
Nagao, Masaru ; Yoshizawa, Shingo
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
A new fabrication method of Spindt-type field emitters will be presented. In our method, double-layered photoresist is used as a lift-off layer for making an emitter tip. The selection of the emitter material is a key for this process. We selected Ni as the emitter material. We also apply volcano-structured double-gate for the Ni Spindt-type FEA.
Keywords :
field emitter arrays; nickel; photoresists; Ni; Ni Spindt-type FEA; Spindt-type field emitters; double-layered photoresist; emitter material; emitter tip; lift-off layer; volcano-structured double-gate; Electrodes; Fabrication; Focusing; Logic gates; Nickel; Resists; Spindt-type FEA; double-layered photoresist; volcano-structured double-gated FEA;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894826
