Title :
Fabrication of a novel TiO2/CNT based transistor
Author :
Monshipouri, Mahta ; Abdi, Younes ; Barati, F.
Author_Institution :
Dept. of Phys., Univ. of Tehran, Tehran, Iran
Abstract :
What we present is fabrication of a novel TiO2/CNT based transistor. Vertically aligned CNTs have been grown on a silicon substrate. The CNTs were then encapsulated by TiO2 nanoparticles, which act as the gate material and are responsible for controlling the field emission current from CNTs. The field emitted electron beam can also be used for lithography, where the diameter of beam can be controlled by gate voltage.
Keywords :
carbon nanotubes; electron beam lithography; electron field emission; nanolithography; nanoparticles; silicon; titanium compounds; transistors; CNT fabrication; TiO2; carbon nanotubes; field emission current; field emitted electron beam; gate material; gate voltage; lithography; nanoparticles; silicon substrate; transistor; Annealing; Irrigation; Logic gates; Nanotubes; Substrates; carbon nanotubes; field emission transistor; nano-lithography;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
DOI :
10.1109/IVNC.2014.6894829
