A hot carrier induced low-level leakage current in thin silicon dioxide films

A new kind of stress induced low level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the drain edge. Since the voltage dependence of this new kind of LLLC is steeper than that in the conventional FN stress-induced LLLC, each conduction mechanism may be different. This LLLC is reduced by both hot electron injection and UV irradiation. These reductions are never observed in the FN stress-induced LLLC. The most promising conduction mechanism is sequential tunneling via trapped holes.