Title :
Driver-less 40 Gb/s LiNbO3 modulator with sub-1 V drive voltage
Author :
Sugiyama, Masaki ; Doi, Masaharu ; Taniguchi, Shinji ; Nakazawa, Tadao ; Onaka, Hiroshi
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We have succeeded in reducing the drive voltage of a 40Gb/s LiNbO3 modulator to 0.9 V, which is the lowest-drive-voltage 40Gb/s LiNbO3 modulator in the world. The modulator can be driven within the break down voltage of a SiGe transistor. This result was achieved using a new design concept that featured a wide-gap, long CPW (coplanar waveguide) electrode.
Keywords :
coplanar waveguides; electro-optical modulation; electrodes; lithium compounds; optical communication equipment; 1 V; 40 Gbit/s; LiNbO3; LiNbO3 modulator; SiGe; SiGe transistor; break down voltage; long coplanar waveguide electrode; lowest-drive-voltage; Coplanar waveguides; Electrodes; Germanium silicon alloys; Laboratories; Logic circuits; Low voltage; Optical modulation; Optical transmitters; Optical waveguides; Silicon germanium;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036765
