• DocumentCode
    2307951
  • Title

    Driver-less 40 Gb/s LiNbO3 modulator with sub-1 V drive voltage

  • Author

    Sugiyama, Masaki ; Doi, Masaharu ; Taniguchi, Shinji ; Nakazawa, Tadao ; Onaka, Hiroshi

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    2002
  • fDate
    17-22 Mar 2002
  • Abstract
    We have succeeded in reducing the drive voltage of a 40Gb/s LiNbO3 modulator to 0.9 V, which is the lowest-drive-voltage 40Gb/s LiNbO3 modulator in the world. The modulator can be driven within the break down voltage of a SiGe transistor. This result was achieved using a new design concept that featured a wide-gap, long CPW (coplanar waveguide) electrode.
  • Keywords
    coplanar waveguides; electro-optical modulation; electrodes; lithium compounds; optical communication equipment; 1 V; 40 Gbit/s; LiNbO3; LiNbO3 modulator; SiGe; SiGe transistor; break down voltage; long coplanar waveguide electrode; lowest-drive-voltage; Coplanar waveguides; Electrodes; Germanium silicon alloys; Laboratories; Logic circuits; Low voltage; Optical modulation; Optical transmitters; Optical waveguides; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
  • Print_ISBN
    1-55752-701-6
  • Type

    conf

  • DOI
    10.1109/OFC.2002.1036765
  • Filename
    1036765
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2307951