Two-Dimensional Model and Simulation of Enhanced Sensitivity PIN Photodiode Detector for 3D Imager

Author

Jin, Xiangliang ; Zeng, Yicheng

Author_Institution

Fac. of Mater. & Photo-Electron. Phys., Xiangtan Univ., Xiangtan, China

Volume

3

fYear

2010

fDate

13-14 March 2010

Firstpage

1059

Lastpage

1062

Abstract

In this paper, a kind of enhanced sensitivity PIN photodiode detector is proposed applying for 3D image sensor. Based on 130 nm CMOS image sensor process, the two dimensional model of both traditional and enhanced sensitivity has been built up for simulation. Process and electrical parameters are simulated and extracted by using physical modeling packages SILVACO. The device simulation results show that high sensitivity and wide spectral response of proposed PIN photodiode is better than that of traditional PIN photodiode.

Keywords

CMOS image sensors; p-i-n photodiodes; 2D model; 3D image sensor; CMOS image sensor; PIN photodiode detector; electrical parameters; enhanced sensitivity; physical modeling packages; Boron; CMOS image sensors; Charge-coupled image sensors; Detectors; Doping; Image sensors; PIN photodiodes; Packaging; Robot vision systems; Semiconductor device modeling; 3D Imager; Modeling; PIN photodiode; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Measuring Technology and Mechatronics Automation (ICMTMA), 2010 International Conference on

Conference_Location

Changsha City

Print_ISBN

978-1-4244-5001-5

Electronic_ISBN

978-1-4244-5739-7

Type

conf

DOI

10.1109/ICMTMA.2010.500

Filename

5460300