Title :
A comparison of the performance of ITO/InP cells flown on the UoSAT-5 flight experiment
Author :
Piszczor, M.F., Jr. ; Gessert, T.A. ; Pearsal, N.M. ; Goodbody, C.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The UoSAT-5 flight experiment has provided some extremely interesting and useful data for a variety of solar cells within the space environment. Of extreme interest is the flight data on the ITO/InP cells. As the satellite approaches nearly two years in orbit, a degradation trend in open circuit voltage and fill factor has been observed. This paper addresses the results of the flight data and discuss possible explanations on the cause of these observations
Keywords :
III-V semiconductors; artificial satellites; indium compounds; photovoltaic power systems; solar cells; space vehicle power plants; tin compounds; ITO-InP; ITO/InP cells; InSnO-InP; UoSAT-5 flight experiment; degradation trend; fill factor; open circuit voltage; satellite; Degradation; Fabrication; Indium phosphide; Indium tin oxide; NASA; Photovoltaic cells; Renewable energy resources; Satellites; Silicon; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346898
