Annealing of irradiation damage in epitaxial InP homojunction solar cells

Author

Pearsall, N.M. ; Robson, N. ; Thomas, H. ; Luo, Jack K. ; Hardingham, C.M. ; Cross, T.A.

Author_Institution

Newcastle Photovoltaics Applications Centre, Northumbria Univ., Newcastle Upon Tyne, UK

fYear

1993

fDate

10-14 May 1993

Firstpage

1442

Lastpage

1447

Abstract

Changes in the performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterise the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room and elevated temperature, is considered

Keywords

III-V semiconductors; annealing; carrier density; crystal defects; electron beam effects; indium compounds; p-n homojunctions; proton effects; semiconductor epitaxial layers; semiconductor junctions; solar cells; spectroscopy; 1 MeV; InP; admittance spectroscopy; carrier concentration; electron irradiation; elevated temperature; epitaxial InP homojunction solar cells; irradiation damage annealing; irradiation induced defects; p-type material; proton irradiation; room temperature; thermal annealing; Annealing; Electrons; Indium gallium arsenide; Indium phosphide; Particle beams; Photovoltaic cells; Protons; Systems engineering and theory; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.346904

Filename

346904