Electrical characterization of ITO/p-InP solar cells

Author

Shi, Z.Q. ; Jia, Q.X. ; He, L. ; Chang, L.H. ; Lee, H.J. ; Anderson, W.A.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Amherst, NY, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

1432

Lastpage

1436

Abstract

Indium tin oxide (ITO)/p-InP solar diodes were fabricated by RF magnetron sputtering with variables of hydrogen during deposition, substrate temperature and in one case, an 80 Å Sn:In layer between ITO and InP. Analysis by current-voltage-temperature and spectroscopic techniques reveal the healing effect of adding H₂ during deposition of ITO. Higher substrate temperature during ITO deposition gives improved ITO films but induces more surface defects. Current conduction is predominantly by thermionic emission. An 80 Å In:Sn layer between InP and ITO causes a significant change in all measured data

Keywords

III-V semiconductors; deep level transient spectroscopy; indium compounds; photoreflectance; semiconductor device testing; solar cells; sputter deposition; sputtered coatings; tin compounds; 80 A; H₂; ITO-InP; ITO/p-InP solar cells; InSnO-InP; RF magnetron sputtering; Sn:In layer; current conduction; current-voltage-temperature technique; deep level transient spectroscopy; deposition; electrical characterization; fabrication; hydrogen; photoreflectance spectroscopy; solar diodes; spectroscopic techniques; substrate temperature; surface defects; thermionic emission; Diodes; Hydrogen; Indium phosphide; Indium tin oxide; Magnetic analysis; Photovoltaic cells; Radio frequency; Spectroscopy; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.346906

Filename

346906