Title :
Low resistivity high efficiency silicon solar cell for potential space application
Author :
Chen, W.J. ; Luo, R.X. ; Chen, J.H. ; Xiao, Z.B. ; Chen, Z.N.
Author_Institution :
Tianjin Inst. of Power Sources, China
Abstract :
Considering the potential space application of high efficiency silicon solar cells, which have been developed significantly in by the use of low resistivity float zoned silicon as the substrates, the cell structure and processing have been modified so that a large area low resistivity high efficiency silicon solar cell will be space qualified and can be put into production. 16% efficient (AMO, 25°C) and space qualified 2 cm×4 cm and 2 cm×6 cm silicon solar cells with polished surfaces have been fabricated in the laboratory
Keywords :
electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; photovoltaic power systems; silicon; solar cells; space vehicle power plants; zone melting; 16.5 percent; 25 C; Si; Si solar cell; float zoned silicon; high efficiency; low resistivity; polished surfaces; potential space application; silicon solar cell; space qualified cells; substrates; Circuits; Conductivity; Dark current; Gallium arsenide; Low earth orbit satellites; Photovoltaic cells; Silicon; Space missions; Surface texture; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346910
