High gain-density K-band p-HEMT LNA MMIC for LMDS and satellite communication

Author

Mimino, Y. ; Hirata, M. ; Nakamura, K. ; Sakamoto, K. ; Aoki, Y. ; Kuroda, S.

Author_Institution

Fujitsu Quantum Devices Ltd., Tokyo, Japan

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

17

Abstract

A miniature and broadband, K-band p-HEMT LNA MMIC, that incorporates simple lumped matching elements and series bias topologies, has been developed for LMDS (Local Multi-point Distribution Service) and satellite communication. The gain and noise figure is 14.5+/-1.5 dB and 1.7+/-0.2 dB, respectively, at frequencies between 23 and 30 GHz. The die size of the MMIC is 0.9 mm/sup 2/, the gain-density of this MMIC is as high as 14.4 dB/mm/sup 2/, which is more than two times larger than that of previously reported.

Keywords

HEMT integrated circuits; MMIC amplifiers; field effect MMIC; integrated circuit noise; microwave links; satellite communication; wideband amplifiers; 1.7 dB; 14.5 dB; 23 to 30 GHz; K-band LNA MMIC; LMDS; PHEMT LNA MMIC; high gain-density LNA MMIC; local multi-point distribution service; lumped matching elements; miniature broadband amplifier; satellite communication; series bias topologies; Circuits; Frequency; Gallium arsenide; HEMTs; Impedance; K-band; MMICs; Resistors; Satellite communication; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.860875

Filename

860875