Title :
Reliability assessment of multiple quantum well avalanche photodiodes
Author :
Yun, Ilgu ; Menkara, Hicham M. ; Wang, Yang ; Oguzman, Ismail H. ; Kolnik, Jan ; Brennan, Kevin F. ; May, Gary S. ; Summers, Christopher J. ; Wagner, Brent K.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The reliability of doped-barrier AlGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by MBE is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron-beam induced current (EBIC) method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.
Keywords :
EBIC; III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; gallium arsenide; life testing; molecular beam epitaxial growth; semiconductor device models; semiconductor device reliability; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; AlGaAs-GaAs; MBE; accelerated life tests; activation energy; avalanche photodiodes; breakdown voltage; dark current; degradation mechanism; device failure probability; doped-barrier devices; electron-beam induced current; ionic impurities; lognormal model; median device lifetime; multiple quantum well; passivation layer; reliability assessment; Avalanche photodiodes; Condition monitoring; Contamination; Dark current; Degradation; Gallium arsenide; Impurities; Life estimation; Life testing; Passivation;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513675
