DocumentCode
2308604
Title
Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output
Author
Sinnesbichler, F.X. ; Hautz, B. ; Olbrich, G.R.
Author_Institution
Infineon Technol. AG, Munich, Germany
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
35
Abstract
We present hybrid SiGe HBT push-push oscillators at 58 GHz, fabricated on 5 mil alumina substrates. A second output additionally allows us to make use of the fundamental 29 GHz signal. A maximum output power of +1 dBm at 58 GHz and simultaneously of 0 dBm at 29 GHz were achieved. Phase noise at 58 GHz was measured to be -108 dBc/Hz at an offset frequency of 1 MHz.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; hybrid integrated circuits; integrated circuit noise; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; semiconductor materials; 29 GHz; 58 GHz; Al/sub 2/O/sub 3/; EHF; SiGe; SiGe HBT push-push oscillator; alumina substrates; hybrid MM-wave IC; low phase noise; Circuit simulation; Coupling circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Oscillators; Phase noise; Scattering parameters; Semiconductor device measurement; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.860879
Filename
860879
Link To Document