• DocumentCode
    2308604
  • Title

    Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output

  • Author

    Sinnesbichler, F.X. ; Hautz, B. ; Olbrich, G.R.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • Volume
    1
  • fYear
    2000
  • fDate
    11-16 June 2000
  • Firstpage
    35
  • Abstract
    We present hybrid SiGe HBT push-push oscillators at 58 GHz, fabricated on 5 mil alumina substrates. A second output additionally allows us to make use of the fundamental 29 GHz signal. A maximum output power of +1 dBm at 58 GHz and simultaneously of 0 dBm at 29 GHz were achieved. Phase noise at 58 GHz was measured to be -108 dBc/Hz at an offset frequency of 1 MHz.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; hybrid integrated circuits; integrated circuit noise; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; semiconductor materials; 29 GHz; 58 GHz; Al/sub 2/O/sub 3/; EHF; SiGe; SiGe HBT push-push oscillator; alumina substrates; hybrid MM-wave IC; low phase noise; Circuit simulation; Coupling circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Oscillators; Phase noise; Scattering parameters; Semiconductor device measurement; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest. 2000 IEEE MTT-S International
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-5687-X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2000.860879
  • Filename
    860879