DocumentCode
2308701
Title
A power combined W-band HBT oscillator
Author
Uchida, K. ; Matsuura, H. ; Yakihara, T. ; Kobayashi, S. ; Oka, S. ; Fujita, T. ; Miura, A.
Author_Institution
Teratec Corp., Tokyo, Japan
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
51
Abstract
In this paper, the development of a power combined W-band heterojunction bipolar transistor (HBT) oscillator is reported. The oscillation frequency is 105.9 GHz, and the output power is +0.6 dBm with a phase noise of -88 dBc/Hz at 1 MHz offset. We believe this is the first report of a W-band fundamental mode power combined oscillator.
Keywords
bipolar MIMIC; heterojunction bipolar transistors; integrated circuit noise; millimetre wave oscillators; phase noise; 105.9 GHz; W-band oscillator; fundamental mode power combined oscillator; heterojunction bipolar transistor; phase noise; power combined HBT oscillator; Cutoff frequency; Displays; HEMTs; Heterojunction bipolar transistors; Phase noise; Power amplifiers; Power generation; Power transmission lines; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.860883
Filename
860883
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