Title :
The achievement of 20% efficiency in a CZ silicon solar cell under concentration
Author :
Bruton, T.M. ; Heasman, K.C. ; Nagle, J.P. ; Russell, R.R.
Author_Institution :
BP Solar Int., Leatherhead, UK
Abstract :
The laser grooved, buried grid solar cell made in a production facility with silicon CZ wafers had previously demonstrated efficiencies of over 18% at 19× concentration. Recent work has succeeded in reducing the cell series resistance and efficiencies of 20.1% (38 cm2) at 10 Suns and 19.8% at 20 Suns have been achieved. Efficiency in the best solar cell has been maintained to over 18% at 40×
Keywords :
crystal growth from melt; elemental semiconductors; semiconductor device testing; semiconductor growth; silicon; solar cells; solar energy concentrators; 19.8 percent; 20.1 percent; CZ wafers; Si; buried grid; concentrator solar cells; laser grooved; semiconductor; series resistance; Aluminum; Area measurement; Contacts; Copper; Electrical resistance measurement; Manufacturing processes; Photovoltaic cells; Production facilities; Silicon; Sun;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346942
