DocumentCode :
2309098
Title :
0.5 V, Low Power, 1 MHz Low Pass Filter in 0.18 µm CMOS Process
Author :
Vasantha, M.H. ; Laxminidhi, T.
Author_Institution :
Dept. of Electron. & Commun. Eng., NITK Surathkal, Mangalore, India
fYear :
2012
fDate :
19-22 Dec. 2012
Firstpage :
33
Lastpage :
37
Abstract :
In this paper a low power continuous-time 4th order low pass Butterworth filter operating at power supply of 0.5 V is presented. A 3-dB bandwidth of 1 MHz using technology node of 0.18 μm is achieved. In order to achieve necessary head-room, the filter uses pseudo-differential bulk-driven transconductor. A master-slave based common mode feedback(CMFB) circuit sets the output common mode voltage of transconductor. The simulation results show that the filter has a dynamic range of 54 dB and consumes a total power of 36 μW when operating at a supply voltage of 0.5 V. The Figure of Merit (FOM) achieved by the filter is 0.05 fJ, lowest among similar low-voltage filters found in the literature. The simulation result show that the 3-dB bandwidth variation for process, voltage and temperature is less than ±10%.
Keywords :
Butterworth filters; CMOS integrated circuits; circuit feedback; low-pass filters; low-power electronics; CMFB circuit; CMOS process; continuous-time Butterworth filter; fourth order Butterworth filter; frequency 1 MHz; low pass Butterworth filter; low power filter; low-voltage filters; master-slave based common mode feedback circuit; power 36 muW; power supply; pseudodifferential bulk-driven transconductor; size 0.18 mum; voltage 0.5 V; bulk-driven; continuous-time; low-pass filter; transconductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic System Design (ISED), 2012 International Symposium on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4704-4
Type :
conf
DOI :
10.1109/ISED.2012.46
Filename :
6526548
Link To Document :
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