DocumentCode
2309212
Title
Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode
Author
Hayashino, Kouhei ; Harauchi, Kenji ; Iwasaki, Yuichi ; Fukui, Kazuhito ; Ao, Jin-Ping ; Ohno, Yasuo
Author_Institution
Inst. of Technol. & Sci., Univ. of Tokushima, Tokushima, Japan
fYear
2012
fDate
10-11 May 2012
Firstpage
179
Lastpage
182
Abstract
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.
Keywords
III-V semiconductors; Schottky barriers; Schottky diodes; circuit simulation; gallium compounds; losses; rectennas; wide band gap semiconductors; DC output power estimation; GaN; Schottky barrier diode; circuit simulation; diode capacitance; loss mechanism analysis; signal frequency effect; single shunt rectenna circuits; Analytical models; Capacitance; Fingers; Integrated circuit modeling; Rectennas; Resistance; Schottky diodes; GaN; loss; rectenna; schottky barrier diode; simulation; single shunt;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location
Kyoto
Print_ISBN
978-1-4673-1777-1
Type
conf
DOI
10.1109/IMWS.2012.6215780
Filename
6215780
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