DocumentCode :
2309283
Title :
Fault models and test methods for subthreshold SRAMs
Author :
Lin, Chen-Wei ; Chen, Hung-Hsin ; Yang, Hao-Yu ; Chao, Mango C -T ; Huang, Rei-Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2010
fDate :
2-4 Nov. 2010
Firstpage :
1
Lastpage :
10
Abstract :
Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold-SRAM design. However, the test methods regarding those newly developed subthreshold-SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold-SRAM designs into three types, study the faulty behavior of different open defects for each type of designs, and then identify the faults which may or may not be covered by a traditional SRAM test method. For those hard-to-detect faults, we will further discuss the corresponding test method according to different each type of subthreshold-SRAM designs. At last, a discussion about the temperature at test will also be provided.
Keywords :
SRAM chips; fault tolerance; fault model; hard-to-detect faults; open defects; subthreshold SRAM design; temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference (ITC), 2010 IEEE International
Conference_Location :
Austin, TX
ISSN :
1089-3539
Print_ISBN :
978-1-4244-7206-2
Type :
conf
DOI :
10.1109/TEST.2010.5699245
Filename :
5699245
Link To Document :
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