Title :
T-shaped anode GaN Schottky barrier diode for microwave power rectification
Author :
Fukui, Kazuhito ; Takeuchi, Taro ; Hayashino, Kouhei ; Harauchi, Kenji ; Iwasaki, Yuichi ; Ao, Jin-Ping ; Ohno, Yasuo
Author_Institution :
Inst. of Technol. & Sci., Univ. of Tokushima, Tokushima, Japan
Abstract :
Reduction of ON resistance and OFF capacitance of GaN microwave rectifying diode is realized by applying T-shaped anode wiring together with increase of donor concentration in the active layer. The time constant defined by the product of ON resistance and OFF capacitance is reduced from 2.72ps to 0.79ps while the breakdown voltage decreased from 108V to 50V.
Keywords :
Schottky barriers; Schottky diodes; gallium compounds; microwave diodes; rectification; GaN; OFF capacitance reduction; ON resistance reduction; T-shaped anode Schottky barrier diode; active layer; breakdown voltage; microwave power rectification; rectifying diode; time 2.72 ps to 0.79 ps; voltage 108 V to 50 V; Anodes; Capacitance; Gallium nitride; Resistance; Scattering parameters; Schottky diodes; GaN; OFF-capacitance; ON-resistance; Schottky barrier diode; T-shape; breakdown voltage;
Conference_Titel :
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-1777-1
DOI :
10.1109/IMWS.2012.6215785
