DocumentCode :
2309372
Title :
Comparison of FFT/IFFT Designs Utilizing Different Low Power Techniques
Author :
Kwen-Siong Chong ; Chang, Joseph S. ; Ebong, I. ; Yilmaz, Yasin ; Mazumder, Prasenjit
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2012
fDate :
19-22 Dec. 2012
Firstpage :
116
Lastpage :
119
Abstract :
Different techniques of power savings in CMOS circuits have been investigated through the years. This work compares the asynchronous approach, the superthreshold approach, and the subthreshold approach in a 128 point FFT processor. The subthreshold design, made in TSMC 65 nm technology, utilizes a 4 kb SRAM with 8T unit cells. The sizing requirements for the 8T cell operated in subthreshold regime is explored as a function of static write margin. The subthreshold processor runs at 1 MHz with an energy consumption of 31 nJ/FFT. Subthreshold approach is seen to be the most energy efficient low power method of the three approaches.
Keywords :
CMOS integrated circuits; SRAM chips; energy consumption; fast Fourier transforms; low-power electronics; power integrated circuits; CMOS circuits; FFT/IFFT designs; SRAM; TSMC; energy consumption; low power techniques; power savings; FFT; SRAM; asynchronous; subthreshold;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic System Design (ISED), 2012 International Symposium on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4704-4
Type :
conf
DOI :
10.1109/ISED.2012.57
Filename :
6526565
Link To Document :
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