DRAM failure analysis with the force-based scanning Kelvin probe

Author

Hochwitz, Todd ; Henning, Albert K. ; Daghlian, Charles ; Bolam, Ronald ; Coutu, Peter ; Gluck, Robert ; Slinkman, James

Author_Institution

Dartmouth Coll., Hanover, NH, USA

fYear

1995

fDate

4-6 April 1995

Firstpage

217

Lastpage

222

Abstract

A fabrication induced failure in complementary metal-oxide-semiconductor dynamic random access memory (CMOS DRAM) cells has been imaged successfully with a novel combination of atomic force and scanning Kelvin probe microscopes. The imaging system was used to verify the presence, and subsequent removal of, ionic contaminants on a sub-micron scale.

Keywords

CMOS memory circuits; DRAM chips; atomic force microscopy; failure analysis; integrated circuit measurement; integrated circuit reliability; scanning probe microscopy; CMOS DRAM cells; DRAM failure analysis; EPD signal; atomic force microscopy; electrochemical potential difference; fabrication induced failure; force-based scanning Kelvin probe; imaging system; scanning Kelvin probe microscopy; submicron scale ionic contaminants; Atomic force microscopy; Educational institutions; Equations; Fabrication; Failure analysis; Frequency; Kelvin; Pollution measurement; Probes; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-2031-X

Type

conf

DOI

10.1109/RELPHY.1995.513682

Filename

513682

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2309501