Title :
DRAM failure analysis with the force-based scanning Kelvin probe
Author :
Hochwitz, Todd ; Henning, Albert K. ; Daghlian, Charles ; Bolam, Ronald ; Coutu, Peter ; Gluck, Robert ; Slinkman, James
Author_Institution :
Dartmouth Coll., Hanover, NH, USA
Abstract :
A fabrication induced failure in complementary metal-oxide-semiconductor dynamic random access memory (CMOS DRAM) cells has been imaged successfully with a novel combination of atomic force and scanning Kelvin probe microscopes. The imaging system was used to verify the presence, and subsequent removal of, ionic contaminants on a sub-micron scale.
Keywords :
CMOS memory circuits; DRAM chips; atomic force microscopy; failure analysis; integrated circuit measurement; integrated circuit reliability; scanning probe microscopy; CMOS DRAM cells; DRAM failure analysis; EPD signal; atomic force microscopy; electrochemical potential difference; fabrication induced failure; force-based scanning Kelvin probe; imaging system; scanning Kelvin probe microscopy; submicron scale ionic contaminants; Atomic force microscopy; Educational institutions; Equations; Fabrication; Failure analysis; Frequency; Kelvin; Pollution measurement; Probes; Random access memory;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513682
