DocumentCode :
2309523
Title :
New non-bias optical beam induced current (NB-OBIC) technique for evaluation of Al interconnects
Author :
Koyama, T. ; Mashiko, Y. ; Sekine, M. ; Koyama, H. ; Horie, K.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear :
1995
fDate :
4-6 April 1995
Firstpage :
228
Lastpage :
233
Abstract :
A new technique, using a highly sensitive optical beam induced current (OBIC), has been developed for failure analysis of Al stripes and vias. The technique realizes the detection of point defects, such as voids in Al interconnects, with no application of voltage or removal of passivation layer being required. This non-bias OBIC (NB-OBIC) technique is very useful in the analysis of Al interconnect failures in actual LSIs.
Keywords :
OBIC; aluminium; electromigration; failure analysis; flaw detection; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; voids (solid); Al; Al interconnect failure analysis; Al stripes; Al vias; LSI; electromigration; failure analysis; high sensitive OBIC; nonbias optical beam induced current technique; point defect detection; via hole chain test structure; voids; Electron beams; Failure analysis; Laser beams; Optical beams; Optical sensors; Optical signal processing; Passivation; Scanning electron microscopy; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
Type :
conf
DOI :
10.1109/RELPHY.1995.513684
Filename :
513684
Link To Document :
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