Title :
High resolution etchants and electrolytes for accurate surface and deep dislocations and precipitates in InP
Author :
Faur, M. ; Faur, M. ; Ghalla, M. ; Bailey, Susan ; Mateescu, Georgiana ; Voljin, V.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
In an effort to optimize the processing of n+p and p +n InP structures made by thermal diffusion, so as to be able to achieve high efficiency InP solar cells by this method of junction formation, the authors have developed a number of new etchants and electrolytes for chemical or electrochemical revealing of surface and deep defect densities (EPD, precipitates and diffusion induced dislocations). These new chemical solutions are not only much more convenient to use for large structural defect density revealing of InP substrates and structures as compared to other techniques, such as transmission electron microscopy, but they also have higher resolution and accuracy
Keywords :
III-V semiconductors; dislocation etching; dislocations; electrolytes; indium compounds; p-n homojunctions; semiconductor device testing; solar cells; thermal diffusion; InP; accuracy; chemical revealing; deep dislocations; defect densities; electrochemical revealing; electrolytes; etchants; junction formation; precipitates; resolution; semiconductor; solar cells; structures; substrates; surface dislocations; thermal diffusion; Capacitance-voltage characteristics; Chemical analysis; Indium phosphide; NASA; Optimization methods; Photovoltaic cells; Scanning electron microscopy; Substrates; Transmission electron microscopy; Wet etching;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346997
