High resolution etchants and electrolytes for accurate surface and deep dislocations and precipitates in InP

Author

Faur, M. ; Faur, M. ; Ghalla, M. ; Bailey, Susan ; Mateescu, Georgiana ; Voljin, V.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

747

Lastpage

751

Abstract

In an effort to optimize the processing of n⁺p and p ⁺n InP structures made by thermal diffusion, so as to be able to achieve high efficiency InP solar cells by this method of junction formation, the authors have developed a number of new etchants and electrolytes for chemical or electrochemical revealing of surface and deep defect densities (EPD, precipitates and diffusion induced dislocations). These new chemical solutions are not only much more convenient to use for large structural defect density revealing of InP substrates and structures as compared to other techniques, such as transmission electron microscopy, but they also have higher resolution and accuracy

Keywords

III-V semiconductors; dislocation etching; dislocations; electrolytes; indium compounds; p-n homojunctions; semiconductor device testing; solar cells; thermal diffusion; InP; accuracy; chemical revealing; deep dislocations; defect densities; electrochemical revealing; electrolytes; etchants; junction formation; precipitates; resolution; semiconductor; solar cells; structures; substrates; surface dislocations; thermal diffusion; Capacitance-voltage characteristics; Chemical analysis; Indium phosphide; NASA; Optimization methods; Photovoltaic cells; Scanning electron microscopy; Substrates; Transmission electron microscopy; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.346997

Filename

346997