DocumentCode
2309590
Title
Al0.22Ga0.78As/Si monolithic two-terminal tandem solar cell grown by MOCVD
Author
Umeno, Masayoshi ; Azuma, Yutaka ; Egawa, Takashi ; Soga, Tetsuo ; Jimbo, Takashi
Author_Institution
Nagoya Inst. of Technol., Japan
fYear
1993
fDate
10-14 May 1993
Firstpage
741
Lastpage
746
Abstract
Multijunction solar cells have been developed for fabricating high efficiency solar cells. These tandem cells immediately have potentials for achieving conversion efficiencies over 30%. In this paper, the authors report an Al0.22Ga0.78As/Si tandem solar cell, for which an active area efficiency of 15.7% have been achieved in a 2-terminal and 17.1% in a 4-terminal under AM1.5, 1 Sun at 27°C. The Al0.22Ga0.78As top cell on Si was grown by metalorganic chemical vapor deposition (MOCVD). The short-circuit current density, open-circuit voltage and fill factor are 13.5 (mA/cm 2), 1.56 (V) and 74.7 (%) for the tandem cell, respectively
Keywords
CVD coatings; aluminium compounds; chemical vapour deposition; elemental semiconductors; gallium arsenide; p-n heterojunctions; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; 1.56 V; 15.7 percent; 17.1 percent; 27 C; Al0.22Ga0.78As-Si; Al0.22Ga0.78As/Si; MOCVD; active area; fabrication; fill factor; metalorganic chemical vapor deposition; multijunction solar cells; open-circuit voltage; semiconductor; short-circuit current density; tandem solar cell; top cell; Boron; Buffer layers; Epitaxial growth; Gallium arsenide; Gold; MOCVD; Photoconductivity; Photovoltaic cells; Voltage; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.346998
Filename
346998
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