Title :
Al0.22Ga0.78As/Si monolithic two-terminal tandem solar cell grown by MOCVD
Author :
Umeno, Masayoshi ; Azuma, Yutaka ; Egawa, Takashi ; Soga, Tetsuo ; Jimbo, Takashi
Author_Institution :
Nagoya Inst. of Technol., Japan
Abstract :
Multijunction solar cells have been developed for fabricating high efficiency solar cells. These tandem cells immediately have potentials for achieving conversion efficiencies over 30%. In this paper, the authors report an Al0.22Ga0.78As/Si tandem solar cell, for which an active area efficiency of 15.7% have been achieved in a 2-terminal and 17.1% in a 4-terminal under AM1.5, 1 Sun at 27°C. The Al0.22Ga0.78As top cell on Si was grown by metalorganic chemical vapor deposition (MOCVD). The short-circuit current density, open-circuit voltage and fill factor are 13.5 (mA/cm 2), 1.56 (V) and 74.7 (%) for the tandem cell, respectively
Keywords :
CVD coatings; aluminium compounds; chemical vapour deposition; elemental semiconductors; gallium arsenide; p-n heterojunctions; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; 1.56 V; 15.7 percent; 17.1 percent; 27 C; Al0.22Ga0.78As-Si; Al0.22Ga0.78As/Si; MOCVD; active area; fabrication; fill factor; metalorganic chemical vapor deposition; multijunction solar cells; open-circuit voltage; semiconductor; short-circuit current density; tandem solar cell; top cell; Boron; Buffer layers; Epitaxial growth; Gallium arsenide; Gold; MOCVD; Photoconductivity; Photovoltaic cells; Voltage; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346998
