Title :
On the degradation features of poly-emitter n-p-n BJTs after hot carrier injection
Author :
Maugain, F. ; Papadas, C. ; Ghibaudo, G. ; Gambetta, N. ; Mortini, P.
Author_Institution :
SGS-Thomson Microelectron., Crolles, France
Abstract :
The purpose of this paper is to comment on the degradation features of poly-emitter n-p-n BJTs after hot carrier injection. First, a physical model which quantitatively explains the experimentally observed gain degradation is presented and its suitability for Computer Aided Reliability (CAR) applications is demonstrated. Besides, a "charge-pumping" based technique, allowing the accurate evaluation of the total fast electronic Si/SiO/sub 2/ interface states located at the perimeter of the emitter-base junction is also proposed.
Keywords :
bipolar transistors; hot carriers; interface states; semiconductor device models; semiconductor device reliability; Si-SiO/sub 2/; charge-pumping based technique; computer aided reliability; degradation features; emitter-base junction; fast electronic Si/SiO/sub 2/ interface states; gain degradation; hot carrier injection; physical model; poly-emitter n-p-n BJTs; BiCMOS integrated circuits; Degradation; Hot carrier injection; Human computer interaction; Interface states; Linear predictive coding; Microelectronics; Research and development; Stress; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513690
