Title :
Concentrator module based on LPE-grown GaAs solar cells
Author :
Blieske, U. ; Baldus, A. ; Bett, A. ; Lutz, F. ; Nguyen, T. ; Schetter, Ch ; Schitterer, K. ; Sulima, O.V. ; Wettling, W.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
Abstract :
The design of a 62.6 cm2 concentrator test module and the results of its outdoor measurements are presented. The module is based on p-AlGaAs/p-GaAs/n-GaAs(substrate) solar cells grown by the LPE etchback-regrowth method. A new concentrator grid design with only 3.3% shadowing is applied to these solar cells. The module efficiency of 19.1% has been obtained under 851 W/m2 direct normal insolation without active cooling and without secondary lenses
Keywords :
III-V semiconductors; aluminium alloys; design engineering; etching; gallium arsenide; liquid phase epitaxial growth; semiconductor device models; semiconductor device testing; solar cells; solar energy concentrators; 19.1 percent; AlGaAs-GaAs-GaAs; LPE etchback-regrowth method; concentrator grid design; direct normal insolation; outdoor measurements; p-AlGaAs/p-GaAs/n-GaAs; semiconductor; shadowing; solar cells; test module; Boats; Epitaxial growth; Etching; Gallium arsenide; Photovoltaic cells; Shadow mapping; Stability; Substrates; Temperature; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346999
