• DocumentCode
    2309657
  • Title

    Efficient GaAs tunnel diode as an inter-cell ohmic contact in the tandem AlxGa1-xAs/GaAs

  • Author

    Zahraman, K. ; Taylor, S.J. ; Beaumont, B. ; Grenet, J.C. ; Gibart, P. ; Vèrié, C.

  • Author_Institution
    Lab. de Phys. du Solide et Energie Solaire, CNRS, Valbonne, France
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    708
  • Lastpage
    711
  • Abstract
    The authors report the growth of GaAs tunnel diodes by atmospheric pressure OMVPE, using diethyl tellurium and carbon tetrachloride as n and p-type dopants respectively, for use as the inter-cell ohmic contact in the monolithic tandem AlxGa1-xAs/GaAs. After annealing under conditions which simulate the growth of the complete tandem structure, the diodes retained a peak current of typically 15.4 A/cm2 at 120°C, which should enable satisfactory operation of this system for space applications under a concentration of up to 500 suns
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; gallium arsenide; ohmic contacts; semiconductor growth; solar cells; tunnel diodes; vapour phase epitaxial growth; 500 suns concentration; AlGaAs-GaAs; GaAs tunnel diode; annealing; atmospheric pressure OMVPE; carbon tetrachloride; diethyl tellurium; dopants; inter-cell ohmic contact; peak current; space applications; tandem AlxGa1-xAs/GaAs solar cell; Computer aided analysis; Diodes; Epitaxial growth; Gallium arsenide; Ohmic contacts; Photonic band gap; Photovoltaic cells; Simulated annealing; Substrates; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.347004
  • Filename
    347004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2309657