DocumentCode :
2309765
Title :
Recombination of carriers in quantum well solar cells
Author :
Corkish, Richard ; Green, Martin A.
Author_Institution :
Centre for Photovoltaic Devices & Syst., New South Wales Univ., Kensington, NSW, Australia
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
675
Lastpage :
680
Abstract :
The quantum well (QW) solar cell is considered in the radiative limit. A (type I) QW is treated as an incremental cell added to a baseline cell made of the barrier material. By considering the QW to be isolated, in that carrier flow into and out of the QW is prevented, the open circuit voltage of the photon incremental cell is determined as a function of well width. This method indicates that a QW reduces the voltage of the baseline cell but the efficiency may still increase, particularly if the baseline cell´s band gap is greater than or equal to its optimum value for the illuminating spectrum
Keywords :
electron-hole recombination; energy gap; minority carriers; semiconductor device models; semiconductor quantum wells; solar cells; band gap; barrier material; baseline cell; carriers recombination; illuminating spectrum; incremental cell; open circuit voltage; photon incremental cell; quantum well solar cells; well width; Absorption; Charge carrier processes; Circuits; Doping; Photonic band gap; Photovoltaic cells; Quantum mechanics; Quantum well devices; Radiative recombination; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347011
Filename :
347011
Link To Document :
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