DocumentCode :
2309799
Title :
Difficulties encountered in developing numerical InP solar cell models
Author :
Durbin, S.M. ; Gray, J.L.
Author_Institution :
Dept. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
665
Lastpage :
669
Abstract :
A number of different InP solar cell models have appeared in the literature, with the ultimate goals of identifying loss mechanisms and designing an optimal cell. Approaches have ranged from traditional analytical models to commercially-available finite element device simulation packages. However, values other than those obtained experimentally for material parameters are often employed in order to fit experimental cell parameters. Effects such as bandgap narrowing, surface recombination, photon recycling and two-dimensional current flow can significantly alter performance predictions, and care must be taken to ensure that they are properly accounted for. This paper describes modeling efforts of InP solar cells using ADEPT, a multidimensional complete numerical simulation package developed at Purdue University
Keywords :
II-VI semiconductors; digital simulation; energy gap; indium compounds; power engineering computing; semiconductor device models; software packages; solar cells; ADEPT; InP; Purdue University; bandgap narrowing; finite element device simulation packages; loss mechanisms; numerical InP solar cell models; photon recycling; surface recombination; two-dimensional current flow; Analytical models; Finite element methods; Indium phosphide; Multidimensional systems; Packaging; Photonic band gap; Photovoltaic cells; Recycling; Spontaneous emission; Surface fitting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347013
Filename :
347013
Link To Document :
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