Title :
Large area GaInP2/GaAs tandem cell development for space power systems
Author :
Chiang, P.K. ; Vijayakumar, P.S. ; Cavicchi, B.T.
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
The authors report the successful fabrication of single junction GaInP2 cells with an excellent uniformity in cell performance across 2" wafers. An average efficiency of 15.1% (with the best cell efficiency at 15.3%) under 1 sun AM0 illumination have been demonstrated on total tested areas of more than 15 cm2. They also report electron radiation experiment results using 0.7, 1.0 and 2.0 MeV energies at fluences as high as 1×1016 cm-2. The results indicate excellent resistance in GaInP2 cells. The damage coefficients of GaInP2 single junction cell deduced from this experiment, have been used to further refine the prediction for the performance of the tandem cell. The results indicate that the GaInP2/GaAs tandem cell is capable of producing a minimum average cell efficiency over 25% (AM0, 28°C) at the beginning-of-life (BOL) with more than 82% remaining power after 1×1015 cm-2, 1 MeV electron irradiation
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; gallium compounds; indium compounds; photovoltaic power systems; semiconductor device testing; solar cells; space vehicle power plants; 1 sun AM0 illumination; 15.1 to 15.3 percent; 25 percent; 28 C; GaInP2-GaAs; GaInP2GaAs tandem solar cell; electron radiation experiment; fabrication; single junction GaInP2 cells; space power systems; Electrons; Gallium arsenide; Lattices; Lighting; MOCVD; Power systems; Space technology; Sun; Surface morphology; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347014
