Title :
Very high peak current CBE grown InGaAs tunnel junction for InP/InGaAs tandem cells fabricated on InP, GaAs, and Si substrates
Author :
Freundlich, A. ; Vilela, M.F. ; Bensaoula, A. ; Medelci, N.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
For the first time high quality In0.53Ga0.47As tunnel junctions were grown at relatively low temperatures (450°C to 530°C) using chemical beam epitaxy (CBE). p++/n++ In0.53Ga0.47As tunnel junctions were realized on InP, GaAs, and GaAs/Si substrates. Homoepitaxial devices (grown on InP) exhibit excellent room temperature I-V characteristics. Peak current density exceeding 1000 A.cm-2 with specific resistivities in the range of 10-4 Ω.cm2 were obtained. Heteroepitaxial devices fabricated on GaAs (4% lattice mismatch) and Si (8% lattice mismatch) exhibit peak current densities similar to their homoepitaxial counterparts. Finally no degradation of the tunnel device performance is observed after the subsequent CBE growth of state of the art InP solar cells
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor growth; solar cells; 450 to 530 C; GaAs; I-V characteristics; In0.53Ga0.47As; InP; InP-InGaAs; Si; chemical beam epitaxial growth; fabrication; heterojunction; peak current density; performance; resistivity; semiconductor; state of the art; substrates; tandem solar cells; tunnel junction; Chemicals; Current density; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347017
