Title :
Monolithic, series-connected InP/Ga0.47In0.53As tandem solar cells
Author :
Wanlass, M.W. ; Ward, J.S. ; Emery, K.A. ; Coutts, T.J.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The status of monolithic, series-connected InP/Ga0.47In 0.53As tandem solar cells is presented. Large-area, 2-terminal tandem cells designed for 1-sun applications in space are reported for the first time. AMO efficiencies as high as 20.1% at 25°C have been measured for cells with an area of 1.00 cm2. Areas for further improvement are discussed
Keywords :
CVD coatings; III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; solar cells; 2-terminal tandem cells; 20.1 percent; 25 C; AMO efficiencies; InP-GaInAs; monolithic solar cells; series-connected InP/Ga0.47In0.53As tandem solar cells; space applications; Doping; Electric variables; Epitaxial growth; Etching; Hydrogen; Indium phosphide; Photonic band gap; Photovoltaic cells; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347021
