Title :
EOS/ESD reliability of deep sub-micron NMOS protection devices
Author :
Ramaswamy, Sridhar ; Duvvury, Charvaka ; Kang, Sung-Mo
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
We have identified new failure mechanisms in EOS/ESD protection circuits for a 0.35 /spl mu/m technology and investigated the effect of process variations on these circuits. We present strategies to improve the performance of these circuits and prevent premature failure of the devices.
Keywords :
MOSFET; electrostatic discharge; failure analysis; semiconductor device reliability; semiconductor device testing; 0.35 micron; EOS/ESD reliability; deep sub-micron NMOS protection devices; failure mechanisms; premature failure; process variations; Capacitors; Circuits; Earth Observing System; Electrostatic discharge; Fingers; MOS devices; Pins; Protection; Pulse measurements; Stress;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513693
