Title :
High jsc values on a single crystal CuInSe2/CdS/CdO cell
Author :
Shukri, Z.A. ; Champness, C.H.
Author_Institution :
Dept. of Electr. Eng., McGill Univ., Montreal, Que., Canada
Abstract :
Several preliminary photovoltaic cells have been fabricated using cleaved substrates of p-type single crystal CuInSe2 with the structure Au/CuInSe2/CdS/CdO/Au, where the CdS was deposited by dipping and the CdO by DC reactive sputtering from a cadmium target. The CuInSe2 substrates were extracted from void-free and crack-free ingots, grown by the vertical Bridgman method from stoichiometric starting proportions; the cleaved planes involved were (112) and (101). Under 100 mW/cm2 of simulated solar illumination, the short circuit current density, jsc, of these devices was found to depend on the thickness of the CdO layer and, in at least one cell, jsc was found to exceed 40 mA/cm2 and Voc to exceed 0.4 volt for an effective CdO area of about 7 mm2, without the use of an antireflection coating. These preliminary results are subject to independent confirmation
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; semiconductor growth; semiconductor thin films; short-circuit currents; solar cells; sputter deposition; sputtered coatings; Au/CuInSe2CdSCdO/Au; CuInSe2-CdS-CdO; DC reactive sputtering; cadmium target; cleaved planes; crack-free ingots; deposition; dipping; photovoltaic cells; short circuit current density; simulated solar illumination; single crystal CuInSe2CdSCdO cell; stoichiometric starting proportions; vertical Bridgman method; void-free ingots; Cadmium; Circuit simulation; Coatings; Crystals; Fabrication; Gold; Laboratories; Lighting; Photovoltaic cells; Sputtering;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347023
