Title :
A MEMS based device interface board
Author :
Kandalaft, N. ; Basith, I. ; Rashidzadeh, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
Abstract :
At gigahertz frequency range, performance degradation of the device interface board increases the yield loss and the cost of manufacturing. In this poster a MEMS based solution is proposed to design a Device Interface Board (DIB) supporting high-speed connectivity between the device under test and the tester. Simulation results indicate that the proposed scheme can operate up to 50 GHz without considerable signal integrity degradation.
Keywords :
micromechanical devices; MEMS based device interface board; MEMS based solution; gigahertz frequency range; high speed connectivity; performance degradation; signal integrity degradation;
Conference_Titel :
Test Conference (ITC), 2010 IEEE International
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-7206-2
DOI :
10.1109/TEST.2010.5699296
