Title :
Numerical modeling of polycrystalline CdTe and CIS solar cells
Author :
Lee, Youn-Jung ; Gray, Jeffery L.
Author_Institution :
Dept. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Polycrystalline CdTe and CuInSe2 are excellent candidates for stable, efficient and low cost solar cells. Numerical modeling can aid the analysis of device operation and can be used as a design aid. A ZnO/thin-CdS/CuInSe2 solar cell is modeled using ADEPT and the effect of the property of the Cu-poor layer near the CdS interface on cell performance is examined. The effect of a nonideal back contact, as well as the influence of the grain properties of a CdS/CdTe solar cell is investigated using one and two dimensional device simulation
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; digital simulation; electronic engineering computing; indium compounds; power engineering computing; semiconductor device models; software packages; solar cells; ternary semiconductors; zinc compounds; 1D; 2D; ADEPT; CdTe-CdS; CuInSe2-CdS-ZnO; computer simulation; design aid; device operation; device simulation; grain properties; interface; nonideal back contact; numerical modeling; performance; polycrystalline semiconductors; solar cells; Computational Intelligence Society; Costs; Crystalline materials; Numerical models; Numerical simulation; Photovoltaic cells; Semiconductor process modeling; Short circuit currents; Voltage; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347028
