Silicon Optical Modulators Based on Tunable Plasmonic Directional Couplers

For the development of Si-based next generation electronic-photonic integrated circuits, a silicon optical modulator is designed based on tunable plasmonic directional couplers. The characteristics are investigated using numerical simulations with a full-vectorial beam propagation method. The center waveguide in the three-core coupler is a MOS-type hybrid plasmonic waveguide that consists of a Si-ITO-SiO2-Si structure. By electrically tuning the ITO´s refractive index, the coupling efficiency of the directional coupler is switchable and, hence, we can obtain modulated optical signals at the outer waveguide, which is configured with a vertical offset. The extinction ratios are 6.7 and 2.3 dB at 1.31- and 1.55-μm wavelength, respectively. The optical modulator can be transformed into a plasmonic absorption modulator based on a two-core directional coupler at the cost of a long coupling length. The proposed silicon optical modulator has the potential to play a key role in complementary metal-oxide-semiconductor-compatible 3-D silicon photonic integrated circuits.