Title :
Effects of processing on the electronic defect levels in CuInSe2
Author :
Moutinho, H.R. ; Dunlavy, D.J. ; Kazmerski, L.L. ; Ahrenkiel, R.K. ; Abou-Elfotouh, F.A.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
The effects of CuInSe2 preparation and processing on the electronic defect levels are investigated. Heat treatments in selenium are correlated with the electro-optical and structural characteristics of single-crystal and polycrystalline material properties and device parameters. High-resolution photoluminescence and deep-level transient spectroscopy studies are used to identify the energy levels associated with the chemical defect states dominating the CuInSe2. The effects of Se heat treatments on existing and process-generated defect states (deep and shallow) are identified and correlated with the junction characteristics. Atomic force microscopy provides information on the nanoscale and microscale structural differences among the films as a function of the processing procedures
Keywords :
atomic force microscopy; copper compounds; deep level transient spectroscopy; deep levels; defect electron energy states; heat treatment; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor technology; semiconductor thin films; ternary semiconductors; CuInSe2; atomic force microscopy; deep-level transient spectroscopy; device parameters; electro-optical characteristics; electronic defect levels; energy levels; films; heat treatment; photoluminescence; polycrystalline material properties; preparation; processing; semiconductor; structural characteristics; Atomic force microscopy; Chemicals; Crystals; Heat treatment; Material properties; Optical films; Photoluminescence; Photovoltaic cells; Semiconductor thin films; Spectroscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347031