DocumentCode
2310051
Title
CuInSe2 solar cells by three source magnetron sputtering
Author
Nakada, Tokio ; Migita, Kazuo ; Kunioka, Akio
Author_Institution
Dept. of Electr. Eng. & Electron., Aoyama Gakuin Univ., Tokyo, Japan
fYear
1993
fDate
10-14 May 1993
Firstpage
560
Lastpage
565
Abstract
Polycrystalline CuInSe2 films were deposited by three source magnetron sputtering onto soda-lime glass and Mo-coated glass substrates at 250-500°C. Almost no selenides on the erosion area of Cu and In targets were observed, which leads to good reproducibility of CuInSe2 films. In-excess films which are suitable for solar cells were obtained even at relatively high substrate temperatures of 400-500°C. The films showed excellent adhesion to the substrates and were grown with a preferential (112) orientation of chalcopyrite structure. The apparent grain size was approximately 0.5 μm. No second phase material was observed in CuInSe2 films with Cu/In ratios of 0.8-1.0. Preliminary solar cells with ZnO:Al/CdS/CuInSe 2 structure resulted in a conversion efficiency of 6.3% under AM1.5 illumination
Keywords
adhesion; copper compounds; grain size; indium compounds; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; ternary semiconductors; 0.5 mum; 250 to 500 C; 6.3 percent; AM1.5 illumination; CuInSe2; Mo-coated glass substrates; Zn:Al-CdS-CuInSe2; adhesion; conversion efficiency; grain size; polycrystalline CuInSe2 films; soda-lime glass; solar cells; three source magnetron sputtering; Adhesives; Copper; Glass; Photovoltaic cells; Pollution measurement; Reproducibility of results; Sputtering; Substrates; Surface morphology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.347033
Filename
347033
Link To Document