Comparison of the properties of F and Al doped ZnO deposited by magnetron sputtering from ZnO and Zn targets

Good electronic quality Zn:O films doped with Al and F have been deposited by reactive sputtering. Conductivities as high as as 2400 S/cm have been achieved with optical properties equivalent to films deposited by CVD techniques. In serving as both a dopant and etchant F makes process control more difficult. Reactively sputtered films are also more uniform than those sputtered from ZnO targets. Deposition rates up to 9 Å/s have been achieved without significant deterioration of electro-optic properties