Title :
Thin film component development for Cu(InGa)Se2/CdS/ITO solar cells for space
Author :
Merino, J.M. ; Diaz, R. ; Leon, M. ; Trigo, J.F. ; Galan, L. ; Elhimer, A. ; Rueda, F. ; Alonso, A.A.
Author_Institution :
Dept. de Fisica Aplicada, Univ. Autonoma de Madrid, Spain
Abstract :
The deposition of CuInxGa1-xSe2 films by the “flash” evaporation technique has been investigated in order to develop flexible thin film solar cells for space use at low temperatures. By changing growth rate, crucible and substrate temperatures, control of the stoichiometry may be attained. The growth rate affects the Cu/(In+Ga) ratio while the substrate temperature changes the Se content. The appearance of a reflection 312/105 in XRD is attributed to the ordering of cation vacancies. XPS measurements indicate a slow contamination in air, in particular the oxidation of Se. ITO of high transmittance (≃80% in 450-900 nm range) has been obtained at <100°C substrate temperature by low energy ion assisted ITO sputtering
Keywords :
II-VI semiconductors; X-ray diffraction examination of materials; X-ray photoelectron spectra; cadmium compounds; copper compounds; gallium compounds; indium compounds; photovoltaic power systems; positive ions; semiconductor growth; semiconductor thin films; solar cells; space vehicle power plants; sputter deposition; sputtered coatings; tin compounds; 450 to 900 nm; Cu(InGa)Se2CdSITO solar cells; CuInGaSe2-CdS-InSnO; CuInGaSe2-CdS-ITO; cation vacancies; component development; crucible temperature; deposition; flash evaporation technique; growth rate; space power; sputtering; stoichiometry; substrate temperature; thin film semiconductors; Energy measurement; Indium tin oxide; Particle measurements; Photovoltaic cells; Reflection; Sputtering; Substrates; Temperature control; Transistors; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347039
