DocumentCode
2310237
Title
Boron compounds as a dominant source of alpha particles in semiconductor devices
Author
Baumann, Robert ; Hossain, Tim ; Murata, Shinya ; Kitagawa, Hideki
Author_Institution
ULSI Technol. Dev. Center, Texas Instrum. Japan Ltd., Ibaraki, Japan
fYear
1995
fDate
4-6 April 1995
Firstpage
297
Lastpage
302
Abstract
The interaction of cosmic ray neutrons and boron is demonstrated as the dominant source of alpha particles and other radiations in electronic devices utilizing borophosphosilicate glass (BPSG). A simple process modification is proposed to significantly reduce this intense source of ionizing radiation without compromising the reflow and passivation properties of BPSG.
Keywords
alpha-particle effects; borosilicate glasses; passivation; phosphosilicate glasses; semiconductor devices; semiconductor technology; B2O3-P2O5-SiO2; BPSG; alpha particles; borophosphosilicate glass; ionizing radiation; passivation properties; process modification; reflow properties; semiconductor devices; soft errors; Alpha particles; Boron; Fabrication; Impurities; Ionizing radiation; Isotopes; Neutrons; Packaging; Radioactive materials; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location
Las Vegas, NV
Print_ISBN
0-7803-2031-X
Type
conf
DOI
10.1109/RELPHY.1995.513695
Filename
513695
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