DocumentCode :
2310475
Title :
Effects of transition metal impurities on solar cell performance in polycrystalline silicon
Author :
Kalejs, J.P. ; Bathey, B.R. ; Borenstein, J.T. ; Stormont, R.W.
Author_Institution :
Mobil Solar Energy Corp., Billerica, MA, USA
fYear :
1993
fDate :
10-14 May 1993
Firstpage :
184
Lastpage :
189
Abstract :
Ti V, Mo and Cr have been deliberately introduced into the bulk melt during growth of polycrystalline silicon octagons by the edge-defined film-fed growth (EFG) technique, and their influence on solar cell performance is examined. Trap concentrations in solar cells have been monitored by DLTS. Cell efficiency is most depressed by Ti and V, and drops by 35% at electrically active concentrations of these impurities of between 1013 and 1014 atoms/cm3 . The degradation for Mo is at most about 15%, and for Cr is 10%. Known electron trap parameters for Ti account for the full degradation in cell performance for Ti-contaminated material when the DLTS-active trap concentration is assumed to provide the dominant recombination sites. Trap cross sections for V and Mo are estimated from DLTS concentrations and from diffusion lengths measured in the solar cells. Cr is found as Cr-B pairs in as-grown material, but their concentration drops below the DLTS detection limit in the finished solar cells. Cell efficiencies of contaminated cells increase with oxygen addition but decrease with boron dopant addition, essentially independently of the specific contaminating transition metal impurity that is present. Hydrogen passivation does not lead to solar cell efficiency recovery in the contaminated materials
Keywords :
carrier lifetime; chromium; crystal growth from melt; deep level transient spectroscopy; electron traps; electron-hole recombination; elemental semiconductors; molybdenum; passivation; semiconductor device testing; semiconductor doping; semiconductor growth; silicon; solar cells; titanium; vanadium; DLTS; Si; Si:Ti,V,Mo,Cr; degradation; diffusion lengths; dominant recombination sites; dopant; doping; edge-defined film-fed growth; electron trap; passivation; performance; polycrystalline semiconductor; solar cell; transition metal impurities; trap concentrations; trap cross sections; Chromium; Degradation; Electron traps; Impurities; Length measurement; Monitoring; Photovoltaic cells; Pollution measurement; Silicon; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
Type :
conf
DOI :
10.1109/PVSC.1993.347056
Filename :
347056
Link To Document :
بازگشت