Title :
Characteristics of HEM silicon produced in a reusable crucible
Author :
Khattak, C.P. ; Schmid, F. ; Schubert, W.K. ; Cudzinovic, M. ; Sopori, B.L.
Author_Institution :
Crystal Syst. Inc., Salem, MA, USA
Abstract :
A reusable crucible has been developed for directional solidification of multicrystalline silicon ingots by HEM. Up to five 40 kg, 33 cm square cross section ingots have been produced without visible degradation of the crucible. Characterization of the silicon shows large grain size, vertical orientation of grain boundaries, uniform resistivity, low defect density, diffusion lengths up to 272 μm and less than 1 ppma oxygen concentration. Solar cells of 2 cm×2 cm size fabricated on 10 cm square wafers have shown good uniformity and efficiencies up to 15.1% and VOC to 616 mV
Keywords :
carrier lifetime; crystal defects; directional solidification; elemental semiconductors; grain boundaries; grain size; materials preparation; silicon; solar cells; 15.1 percent; HEM silicon; Si; diffusion lengths; directional solidification; grain boundaries; large grain size; low defect density; multicrystalline silicon ingots; reusable crucible; solar cells; uniform resistivity; vertical orientation; Ceramics; Costs; Crystallization; Degradation; Grain boundaries; Laboratories; Photovoltaic systems; Production; Silicon compounds; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.347077
