Characteristics of HEM silicon produced in a reusable crucible

Author

Khattak, C.P. ; Schmid, F. ; Schubert, W.K. ; Cudzinovic, M. ; Sopori, B.L.

Author_Institution

Crystal Syst. Inc., Salem, MA, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

73

Lastpage

77

Abstract

A reusable crucible has been developed for directional solidification of multicrystalline silicon ingots by HEM. Up to five 40 kg, 33 cm square cross section ingots have been produced without visible degradation of the crucible. Characterization of the silicon shows large grain size, vertical orientation of grain boundaries, uniform resistivity, low defect density, diffusion lengths up to 272 μm and less than 1 ppma oxygen concentration. Solar cells of 2 cm×2 cm size fabricated on 10 cm square wafers have shown good uniformity and efficiencies up to 15.1% and V_OC to 616 mV

Keywords

carrier lifetime; crystal defects; directional solidification; elemental semiconductors; grain boundaries; grain size; materials preparation; silicon; solar cells; 15.1 percent; HEM silicon; Si; diffusion lengths; directional solidification; grain boundaries; large grain size; low defect density; multicrystalline silicon ingots; reusable crucible; solar cells; uniform resistivity; vertical orientation; Ceramics; Costs; Crystallization; Degradation; Grain boundaries; Laboratories; Photovoltaic systems; Production; Silicon compounds; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347077

Filename

347077