Title :
An accelerated sodium resistance test for IC passivation films
Author :
Hong, Charlie ; Henson, Brent ; Scelsi, Tony ; Hance, Robert
Author_Institution :
Motorola Semicond. Products Sector, Austin, TX, USA
Abstract :
A low level IC burn-in failure mechanism caused by post-passivation sodium contamination has been observed. An accelerated stress test has been developed based on SIMS, SEM and TEM analysis. The results have been compared to burn-in data. Four types of passivation films and two types of assembly processes were used to demonstrate the effectiveness of this test.
Keywords :
VLSI; failure analysis; integrated circuit reliability; integrated circuit testing; life testing; passivation; scanning electron microscopy; secondary ion mass spectroscopy; transmission electron microscopy; IC passivation films; Na; SEM; SIMS; TEM analysis; accelerated sodium resistance test; accelerated stress test; assembly processes; failure mechanism; low level IC burn-in; post-passivation sodium contamination; Contamination; Etching; Failure analysis; Integrated circuit testing; Life estimation; MOSFETs; Passivation; Semiconductor films; Threshold voltage; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513698
